Conductive aluminum pastes for rear components of solar cells

PASE-12

Application: Aluminum paste specially developed for forming a doped p+ layer for use with mono- and multi-crystalline silicon p-type wafers, and also ultrathin wafers (<200 µm). Used for obtaining a quality and homogeneous rear contact, and also for the rear surface area (BSF-layer). PASE-12 is suitable for combined firing with pastes for front components, and possesses good compatibility with other Monocrystal products for metallization of solar cells.

Benefits:

High efficiency
Outstanding BSF-layer quality
Fine product quality – defect-free with good adhesion
Good printing characteristics

Specification: PASE-12

PASE-12D

Application: New modification of high-efficiency aluminum paste from the PASE series for the metallization of rear components of solar cells. The updated formula provides for high performance on ultrathin wafers with a low bow.

Benefits:

High efficiency
Outstanding BSF-layer quality
Low deflection of ultrathin wafers
Fine product quality – defect-free with good adhesion
Good printing characteristics
Compatibility with other Monocrystal products

Specification: PASE-12D

PALF-100

Application: Lead-free aluminum paste specially developed for forming a high-concentration p+ layer for use with mono- and multicrystalline silicon p-type wafers. Used for obtaining a quality and homogeneous rear contact, and also for the rear surface area (BSF-layer).

Benefits

High efficiency
Outstanding BSF-layer quality
Fine product quality – defect-free with good adhesion
Good printing characteristics
Compatibility with other Monocrystal products
Does not contain lead

Specification: PALF-100

PALF-100A

Application: Lead-free aluminum paste specially developed for forming a high-concentration p+ layer for use with mono- and multicrystalline silicon p-type wafers, and also with ultrathin wafers (<200 µm). PALF-100A is used for obtaining a quality and homogeneous rear contact, and also for rear surface areas (BSF-layer).