News

Monocrystal is glad to announce its participation in ICNS-7 Conference (7-th International Conference on Nitride Semiconductors), which took place on September, 16-21 in Las Vegas, USA.

This year the Conference has attracted a record number of attendees – more than 930 scientists, students and representatives of companies involved in semiconductor business, as compared to 700 visitors of the previous Conference ICNS-6.

During several years the Conference has become a significant event on a world scale, aiming at discussion on the latest research results and exchange of information that the participants and visitors can use for development of their business and technology.

The conference covered all the aspects of Group-III Nitride Semiconductors with special emphasis on Epitaxial Growth (MBE, MOVPE, HVPE, etc.); Bulk Crystals; Theory; Materials Issues (III-V-N, InN, etc.); Defect Engineering; Structural Analysis; Optical Characterization; Nanostructures; Devices (LEDs, laser-diodes, transistors, sensors).

Monocrystal, taking part in this Conference for the second time, exhibited a wide range of its products suitable for nitrides epitaxial deposition, including 6” C-plane epi-polished substrates.

We are pleased to support Blue 2007: Advanced LEDs & Lasers (The International Industry Review for Advanced LED & Semiconductor Laser Technologies) as a Platinum Sponsor. Visit our booth BLUE 2007, 17th-20th April.

Monocrystal took part in the Photonics West 2007 that was held on January 23 – 25, 2007 San Jose, California USA - Convention Center.

Monocrystal took part in the The 6th International Conference "Solid state chemistry and modern micro- and nanotechnologies" that was held on September 17-22, 2006 in Kislovodsk, Russia.

The primary subjects of the event were:
• Solid state chemistry and modern materials.
• Low-dimension structure physics. (Quantum-dimensional heterostructures and nanostructures).
• Nanotechnology.
• New high band gap semiconductor: technology, properties, application.
• Single mono-crystals. Growing process. Properties.

Our company presented the following reports:
1. NOVEL REQUIREMENTS TO SAPPHIRE SUBSTRATES FOR GaN DEPOSITION. Dr. Kachalov O.V., Penkov S.V.
2. OPTICAL SAPPHIRE, TECHNICAL REQUIREMENTS AND CRYSTAL GROWTH PROCESSING. Eskov E.V., Ignatov A.Y., Postolov V.S., Filimonov A.S.
3. SAPPHIRE FOR ELECTRONICS. CRYSTAL TECHNOLOGY PECULIARITIES. Ignatov A.Y., Eskov E.V., Kuptsov V.Ph.,Nikolenko M.V.
4. THE AFFECTION OF IMPURITIES ON OPTICAL CLARITY AND INDUCED ABSORPTION IN SAPPHIRE CRYSTALS. Eskov E.V., Sabelnikova M. M., Ignatov A.Y.
5. THE IMPACT OF GLOBAL INTERCHANGE OF HEAT ON LEUCOSAPPHIRE CRYSTALS PERFECTION IN KYROPOULOS METHOD. MODELING AND EXPERIMENTS. Postolov V.S., Eskov E.V., Beiik A.S., Rubtsova S.P.
6. THE AFFECTION OF SEED MATERIAL STRUCTURAL PERFECTION ON SAPPHIRE CRYSTAL QUALITY, GROWN BY KYROPOULOS METHOD. Nikolenko M.V., Eskov E.V., Ignatov A.Y., Grinko V.V.
7. THE AFFECTION OF EPITAXIAL TECHNOLOGY FACTORS ON PHYSICAL PROPERTIES OF SILICON-SAPPHIRE BOUNDARY SURFACE. Ignatov A.Y., Postolov V.S., Filimonov A.S.
8. OPTICAL METHODS OF MONITORING SOS STRUCTURE HETEROEPITAXIAL LAYER PARAMETERS. Ignatov A.Y , Postolov V S., Sabelnikova M. M.
9. EXPERIENCE OF BOUNDED DIAMOND-ABRASIVE TOOL APPLICATION FOR LARGE DIAMETER SAPPHIRE WAFERS DOUBLE-SIDED PRICESSING. Soshnikova O.V., Postolov V.S., Philimonov A.S.
10. X-RAY TECHNIQUE APPLICATION FOR EVALUATION OF DAMAGE LAYERS ON SAPPHIRE WAFERS. Soshnikova O.V.. Ignatov A.Y., Pavlov V.Ph., Litvinov Y.M.
11. OPTICAL SAPPHIRE, TECHNICAL REQUIREMENTS AND GROWTH PROCESS. Eskov E.V., Ignatov A.Y., Postolov V.S., Philimonov A.S.

Monocrystal took part in the 4th Solid State Lighting Suppliers Forum (SSLS) that was held on May 9-11, 2006 in Ambassador Hotel, Hsinchu, Taiwan. The primary goal of the event is to continue the promotion of rapid development, acceptance and mainstream market adoption of solid state semiconductor light emitting technologies and devices. The international Forum brought together the complete vertical market from leading manufacturers to companies dealing with packaging and assembly. We were pleased to support SSLS/Blue 2006 as a Platinum Sponsor. Monocrystal presented a report on Sapphire substrate technology update which was focused on: • Moving to larger substrates • Achieving better GaN layer uniformity and higher brightness • Changing requirements to surface quality